Giant Spatial Redistribution of Electrons in a Wide Quantum Well Induced by Quantizing Magnetic Field

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Аннотация

In samples of field-effect transistors based on GaAs/AlGaAs heterostructures with an electron system in a single 50-nm-wide GaAs quantum well, a transition stimulated by a quantizing magnetic field has been detected from a bilayer state of the system in zero magnetic field to a single-layer state when only the lowest Landau level is filled. In contrast to the results for the 60-nm-wide quantum well obtained in [S. I. Dorozhkin, A. A. Kapustin, I. V. Fedorov, V. Umansky, and J. H. Smet, Phys. Rev. V 102, 235307 (2020)], the single-layer state is observed not only in incompressible quantum Hall effect states of the electron system at filling factors of 1 and 2, but also in compressible states between these filling factors. The spatial location of the single-layer system in the quantum well has been established; it appears to be independent of the electron distribution over the layers in a low magnetic field. A possible qualitative explanation for this observation has been proposed. The detected transition is supposedly due to the negative compressibility of two-dimensional electron systems caused by exchange-correlation contributions to the electron−electron interaction.

Авторлар туралы

S. Dorozhkin

Osipyan Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region, Russia

Email: dorozh@issp.ac.ru

A. Kapustin

Osipyan Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region, Russia

Email: dorozh@issp.ac.ru

I. Fedorov

Osipyan Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region, Russia

Email: dorozh@issp.ac.ru

V. Umanskiy

Department of Physics, Weizmann Institute of Science, 76100, Rehovot, Israel

Email: dorozh@issp.ac.ru

Yu. Smet

Max-Planck-Institut für Festkörperforschung, D-70569, Stuttgart, Germany

Хат алмасуға жауапты Автор.
Email: dorozh@issp.ac.ru

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