Сегнетоэлектрические транзисторы: принципы работы, материалы, приложения

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Аннотация

Приложения, связанные с применением искусственного интеллекта (ИИ) и интернета вещей, требуют высокопроизводительных вычислительных систем. Современные цифровые нейроморфные сопроцессоры, которые изготавливаются по КМОП-технологии, неэффективны при выполнении нейросетевых алгоритмов, из-за ограничений архитектуры фон-Неймана. Перспективное направление для исследований – интегральные схемы на основе энергонезависимых сегнетоэлектрических транзисторов. В работе приведен обзор исследований, посвященных сегнетоэлектрическим материалам, характеристикам сегнетоэлектрических транзисторов и методам их исследования.

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А. Ю. Резнюков

Национальный исследовательский центр “Курчатовский институт”; Московский энергетический институт

Автор, ответственный за переписку.
Email: RezniukovAY@mpei.ru
Россия, Москва; Москва

К. А. Фетисенкова

Национальный исследовательский центр “Курчатовский институт”; Московский физико-технический институт

Email: fetisenkova@ftian.ru
Россия, Москва; Москва

А. Е. Рогожин

Национальный исследовательский центр “Курчатовский институт”; Московский энергетический институт; Московский физико-технический институт

Email: rogozhin@ftian.ru
Россия, Москва; Москва; Москва

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2. Рис. 1. Cхема (а) FeFET структуры с обратным затвором, (б) FeFET структуры с прямым затвором

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3. Рис. 2. Гистерезис передаточной кривой в FeFET [16]

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4. Рис. 3. Доменная структура затворного стека FeFET

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5. Рис. 4. (а) Схема FeFET при использовании PZT в качестве сегнетоэлектрического диэлектрика; (б) структура перовскита PZT

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6. Рис. 5. Схема FeFET на основе HZO со слоем TiN в качестве затвора

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7. Рис. 6. FeS-FET структура с использованием α-In2Se3 в качестве сегнетоэлектрического полупроводникового слоя

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8. Рис. 7. Трехтерминальная синаптическая ячейка на основе FeFET [46]

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9. Рис. 8. Структура Fe-FinFET

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10. Рис. 9. Схематическое изображение тестовой структуры для исследования сегнетоэлектриков

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11. Рис. 10. Принцип работы ПСМ на обратном пьезоэлектрическом эффекте [72]

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12. Рис. 11. Распределение сегнетоэлектрических доменов при переключении поляризации, полученное с помощью ПСМ [73]

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13. Рис. 12. Схематическое представление формы импульсов метода PUND, tinc – время нарастания, tdec – время спада, trelax – время релаксации [75]

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