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ISSN 0544-1269 (Print) ISSN 3034-5480 (Online)
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Home > Search > Author Details

Author Details

Чумаков, А. И.

Issue Section Title File
Vol 53, No 2 (2024) MODELING The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits
Vol 52, No 4 (2023) НАДЕЖНОСТЬ Single Event Displacement Effects in a VLSI
Vol 54, No 3 (2025) MODELING Features of upsets formation in VLSI under pulsed ionizing radiation
 

 

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