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ISSN 0544-1269 (Print) ISSN 3034-5480 (Online)
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Home > Search > Author Details

Author Details

Рехвиашвили, С. Ш.

Issue Section Title File
Vol 53, No 3 (2024) INSTRUMENTATION The Effect оf Laser Radiation оn Functional Properties of MOS Structures
Vol 52, No 6 (2023) INSTRUMENTATION OPTICALLY PUMPED BIPOLAR TRANSISTOR
Vol 53, No 6 (2024) INSTRUMENTATION Tunnel Breakdown Bipolar Transistor
 

 

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