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Russian Microelectronics
ISSN 0544-1269 (Print) ISSN 3034-5480 (Online)
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
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