Effects of quantum recoil forces in resistive switching in memristors

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About the authors

O. G Kharlanov

Lomonosov Moscow State University

Author for correspondence.
Email: letters@kapitza.ras.ru

References

  1. L. Chua, IEEE Trans. Circuit Theory 18, 507 (1971).
  2. D. Ielmini and H.-S. P. Wong, IEEE Nanotechnol. Mag. 1, 333 (2018).
  3. Z. Wang, H. Wu, G. W. Burr, C. S. Hwang, K. L. Wang, Q. Xia, and J. J. Yang, Nat. Rev. Mater. 5, 173 (2020).
  4. R. Landauer, IBM J. Res. Dev. 1, 223 (1957).
  5. W. Xue, S. Gao, J. Shang, X. Yi, G. Liu, and R. Li, Adv. Electron. Mater. 5, 1800854 (2019).
  6. A. A. Minnekhanov, B. S. Shvetsov, M. M. Martyshov, K. E. Nikiruy, E. V. Kukueva, M. Yu. Presnyakov, P. A. Forsh, V. V. Rylkov, V. V. Erokhin, V. A. Demin, and A. V. Emelyanov, Org. Electron. 74, 89 (2019).
  7. D. Dundas, E. J. McEniry, and T. N. Todorov, Nat. Nanotechnol. 4, 99 (2009).
  8. O. G. Kharlanov, B. S. Shvetsov, V. V. Rylkov, and A. A. Minnekhanov, Phys. Rev. Applied 17, 054035 (2022).
  9. V.-N. Do, Adv. Nat. Sci: Nanosci. Nanotechnol. 5, 033001 (2014).
  10. R. E. Peierls, Quantum Theory of Solids, Oxford University Press, London (1955).
  11. H. W. Sheng, M. J. Kramer, A. Cadien, T. Fujita, and M. W. Chen, Phys. Rev. B 83, 134118 (2011).

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