Josephson Dynamics at High Transmissions: Voltage and Current Bias Limits
- Autores: Galaktionov A.V.1, Zaikin A.D.1
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Afiliações:
- Tamm Department of Theoretical Physics, Lebedev Physical Institute, Russian Academy of Sciences
- Edição: Volume 118, Nº 9-10 (11) (2023)
- Páginas: 671-676
- Seção: Articles
- URL: https://vestnik.nvsu.ru/0370-274X/article/view/664225
- DOI: https://doi.org/10.31857/S1234567823210073
- EDN: https://elibrary.ru/PSJPUI
- ID: 664225
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Resumo
We establish a direct relation between the I–V curves for highly transparent Josephson junctions in the voltage- and current-biased regimes. We demonstrate that the presence of sub-Ohmic dissipation at subgap voltages and temperatures yields the linear dependence of the average voltage
Sobre autores
A. Galaktionov
Tamm Department of Theoretical Physics, Lebedev Physical Institute, Russian Academy of Sciences
Email: galakt@lpi.ru
119991, Moscow, Russia
A. Zaikin
Tamm Department of Theoretical Physics, Lebedev Physical Institute, Russian Academy of Sciences
Autor responsável pela correspondência
Email: galakt@lpi.ru
119991, Moscow, Russia
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