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Stabilization of memristor cell states during initial switching process after forming
- Authors: Fadeev A.V.1, Rudenko K.V.1
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Affiliations:
- NRC “Kurchatov Institute”
- Issue: Vol 54, No 3 (2025)
- Pages: 224-231
- Section: MEMRISTORS
- URL: https://vestnik.nvsu.ru/0544-1269/article/view/689384
- DOI: https://doi.org/10.31857/S0544126925030044
- EDN: https://elibrary.ru/PXFOKM
- ID: 689384
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Abstract
A self-consistent model describing the break/restoration of a conducting channel-filament in a memristor cell based on the transport of oxygen vacancies in transition metal oxides is build. The stabilization of the memristor cell conductivity during initial switching from a low-resistance state to a high-resistance state and back is studied.
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About the authors
A. V. Fadeev
NRC “Kurchatov Institute”
Author for correspondence.
Email: AlexVFadeev@gmail.com
Valiev IPT
Russian Federation, MoscowK. V. Rudenko
NRC “Kurchatov Institute”
Email: rudenko@ftian.ru
Valiev IPT
Russian Federation, MoscowReferences
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Supplementary files
Supplementary Files
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Fig. 1. General diagram of the memristor cell adopted in the model (a), energy diagram of the memristor in the equilibrium state (b), during the RESET switching process (V > 0) (c), during the SET switching process (V < 0) (d)
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Fig. 2. Calculated current-voltage characteristics corresponding to the first three memristor switching cycles after forming
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Fig. 3. Pulse mode of memristor operation V(t), corresponding to one switching cycle, with reading of the HRS and LRS states
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Fig. 4. Dependence of the current strength on the pulse application time during the RESET operation when constructing the I-V characteristics (a), during pulse switching (b), and also during the SET operation when constructing the I-V characteristics (c), during pulse switching (d)
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Fig. 5. Dependence of the memristor cell resistance on the number of switchings for different filament radii of the cylindrical filament
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Fig. 6. Dependence of the charge passed during SET/RESET operations through the memristor cell on the diameter of the cylindrical filament
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Fig. 7. Dependence of the charge passed during SET/RESET operations through the memristor cell on the switching number for filaments with a diameter of 8 nm (a) and 6 nm (b)
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