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Russian Microelectronics
ISSN 0544-1269 (Print) ISSN 3034-5480 (Online)
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Home > Search > Browse Section Index > TECHNOLOGIES

TECHNOLOGIES

Issue Title File
Vol 52, No 2 (2023) Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture PDF
(Rus)
Efremov A.M., Betelin V.B., Kwon K.
Vol 52, No 2 (2023) Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide PDF
(Rus)
Kerimov E.A.
Vol 52, No 1 (2023) Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He PDF
(Rus)
Ефремов А., Kwon K.
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