NANOTRANSISTORS
期 | 标题 | 文件 | |
卷 54, 编号 2 (2025) | Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors |
![]() (Rus) |
|
Masalsky N. | |||
1 - 1 的 1 信息 |
期 | 标题 | 文件 | |
卷 54, 编号 2 (2025) | Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors |
![]() (Rus) |
|
Masalsky N. | |||
1 - 1 的 1 信息 |