期 |
栏目 |
标题 |
文件 |
卷 53, 编号 1 (2024) |
ТЕХНОЛОГИИ |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
|
卷 52, 编号 5 (2023) |
ПРИБОРЫ |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
|
卷 52, 编号 2 (2023) |
ЛИТОГРАФИЯ |
Cross Sections of Scattering Processes in Electron-Beam Lithography |
|
卷 52, 编号 2 (2023) |
ПРИБОРЫ |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
|
卷 54, 编号 1 (2025) |
МОДЕЛИРОВАНИЕ |
Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models |
|
卷 54, 编号 2 (2025) |
NANOSTRUCTURES |
Electrical characteristics of ruthenium lines with a cross-sectional area less than 1000 nm2 |
|
卷 54, 编号 2 (2025) |
ПРИБОРЫ |
Ferroelectric transistors: operating principles, materials, applications |
|