Electrical characteristics of ruthenium lines with a cross-sectional area less than 1000 nm2

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

As the IC scales, it becomes necessary to form lines with a width of less than 20 nm at the lower levels of the metallization system. Copper at such sizes ceases to meet the requirements for RC delays and resistance to electromigration. Therefore, it is necessary to look for alternative materials to replace copper, which will provide higher resistance to electromigration and lower resistance of the lines. The most promising candidate is Ru. In this study, test structures with ruthenium lines were obtained. For this purpose, such methods of creating structures as plasma-stimulated deposition from the gas phase, plasma-stimulated atomic layer deposition, magnetron sputtering, electron beam lithography, and plasma chemical etching were used. Spectroscopic ellipsometry and scanning electron microscopy were used to control the creation and investigation of the resulting structures. The electrical characteristics of the structures were measured and tested.

Толық мәтін

Рұқсат жабық

Авторлар туралы

O. Glaz

Kurchatov Institute; Moscow Power Engineering Institute

Хат алмасуға жауапты Автор.
Email: glaz@ftian.ru
Ресей, Moscow; Moscow

A. Rogozhin

Kurchatov Institute

Email: rogozhin@ftian.ru
Ресей, Moscow

Әдебиет тізімі

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  7. Wan D., Paolillo S., Rassoul N., Kotowska B.K., Blanco V., Adelmann C., Lazzarino F., Ercken M. Subtractive etch of ruthenium for sub-5nm interconnect // 2018 IEEE International Interconnect Technology Conference (IITC). – IEEE, 2018. – С. 10–12.
  8. Van der Veen M.H., Heylen N., Varela Pedreira O., Ciofi I., Decoster S., Gonzalez V. Vega, Jourdan N., Struyf H., Croes K., Wilson C.J., Tőkei Zs. Damascene benchmark of Ru, Co and Cu in scaled dimensions // 2018 IEEE International Interconnect Technology Conference (IITC). – IEEE, 2018. – С. 172–174.

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Әрекет
1. JATS XML
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2. Fig. 1. Schematic representation of test structures for resistance measurement

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3. Fig. 2. Resistive mask after thermal drying (left) and vacuum evacuation (right)

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4. Fig. 3. Dimensions of the final structure

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5. Fig. 4. SEM image of the structure at an angle. The thickness of the lines is 30 nm taking into account the 45° tilt angle correction

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6. Fig. 5. General view of the structure with lines from above

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7. Fig. 6. Image of the structure lines with a width of 10 nm

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8. Fig. 7. Image of the structure lines with a width of 15 nm

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9. Fig. 8. Places where lines join the sites

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10. Fig. 9. Image of the structure lines with a width of 20 nm

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11. Fig. 10. Cross sections of 20 nm wide lines

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12. Fig. 11. SEM images of the resist lithographic mask (left) and ruthenium lines after etching (right)

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13. Fig. 12. Process of ruthenium structure SAC acquisition

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14. Fig. 13. SAC of ruthenium structure with 15 nm wide lines

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15. Fig. 14. Dependence of the average resistivity of the line on the cross-sectional area

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16. Fig. 15. Dependence of the average line resistivity on the line width for different ruthenium thicknesses [7]. The obtained results are marked with black dots

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17. Fig. 16. Dependence of the average resistivity of the line on the cross-sectional area [8]. The obtained results are marked with black dots

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18. Fig. 17. Cross-section of the original sample. The ruthenium layer has a columnar structure, which has a bad effect on its electrical conductivity

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