Investigation of elastic light-emitting diode based on CsPbBr3 perovskite film, crystallized on a gallium phosphide nanowires array

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Abstract

Recently, there has been rapid development of technologies for creating flexible and stretchable optoelectronic devices. A promising material in terms of fundamental properties is the inorganic halide perovskite CsPbBr3, whose electroluminescence brightness can reach 45.000 cd/m2. However, the most common thin-film technology of perovskite-based devices cannot solve a number of significant problems: ensuring the stability of the perovskite to the environment, creating tensile-resistant contacts, ensuring efficient injection of carriers into the electroluminescent layer, etc. To solve these problems, the authors developed a new device architecture based on a distributed electrode, which uses an array of whisker nanocrystals embedded in the light-emitting layer, thus solving the fundamental problem of the short lifetime of CsPbBr3 carriers. The device is enclosed in a special silicone polymer — a transparent inert flexible and stretchable matrix that protects the CsPbBr3 perovskite from environmental conditions and maintains the orientation of the arrays of whisker nanocrystals. 90% transparent single-walled carbon nanotubes, which have a high tensile strength and low electrical resistance, were used as an electrode providing lateral transport of carriers. Thus, a flexible device with high electroluminescence efficiency was obtained.

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About the authors

A. A. Yakubova

Alferov Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences

Author for correspondence.
Email: yakubova.nastya@bk.ru
Russian Federation, St. Petersburg

F. M. Kochetkov

Alferov Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences

Email: yakubova.nastya@bk.ru
Russian Federation, St. Petersburg

V. A. Mastalieva

Alferov Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences

Email: yakubova.nastya@bk.ru
Russian Federation, St. Petersburg

A. S. Goltaev

Alferov Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences

Email: yakubova.nastya@bk.ru
Russian Federation, St. Petersburg

V. V. Neplokh

Alferov Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences

Email: yakubova.nastya@bk.ru
Russian Federation, St. Petersburg

D. M. Mitin

Alferov Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences

Email: yakubova.nastya@bk.ru
Russian Federation, St. Petersburg

I. S. Mukhin

Alferov Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University

Email: yakubova.nastya@bk.ru
Russian Federation, St. Petersburg; St. Petersburg

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Supplementary files

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2. Fig. 1. GaP nanowires with high height-to-diameter ratio.

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3. Fig. 2. CsPbBr3 perovskite layer on GaP nanowires.

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4. Fig. 3. Results of separating an array of GaP nanowires from a substrate using microtome cutting: unsuccessful, with detachment of the supporting layer (a); successful, together with the supporting layer (b).

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5. Fig. 4. The process of stretching a flexible sample using a caliper.

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6. Fig. 5. Electroluminescence of the light-emitting material on the substrate (a) and separated from the substrate (b). Current-voltage characteristics of the light-emitting sample before (1) and after separation (2) of the GaP nanocrystal array from the substrate (c) and the interface between the nanowire/carbon nanotube layers (d).

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7. Fig. 6. Comparison of normalized electroluminescence spectra of light-emitting material not separated (1) and separated (2) from the substrate.

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8. Fig. 7. Spectroradiometric characteristics of the sample on the substrate (a) and separated from the substrate (b) at the following current values on the LED: a) 0.5 (1); 1 (2); 3 (3); 5 (4); 10 (5); 15 (6); 20 mA (7); b) 0.1 (1); 0.2 (2); 0.3 mA (3); ampere-brightness characteristics of the LED on the substrate (c) and the flexible LED (d).

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